cystech electronics corp. spec. no. : c887j3 issued date : 2015.04.23 revised date : page no. : 1/ 9 MTD30N10J3 cystek product specification n-channel enhancement mode power mosfet MTD30N10J3 bv dss 100v i d @v gs =10v, t c =25 c 33a r ds(on) @v gs =10v, i d =10a 31m (typ) r ds(on) @v gs =4.5v, i d =10a 39m (typ) features ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package symbol outline MTD30N10J3 to-252(dpak) g gate g d s d drain s source ordering information device package shipping MTD30N10J3-0-t3-g to-252 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c887j3 issued date : 2015.04.23 revised date : page no. : 2/ 9 MTD30N10J3 cystek product specification absolute maximum ratings (t c =25c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 100 gate-source voltage v gs 20 v continuous drain current @ t c =25 c, v gs =10v 33 continuous drain current @ t c =100 c, v gs =10v i d 23 pulsed drain current (note 1) i dm 90 avalanche current i as 32 a avalanche energy @ l=0.3mh, i d =32a, r g =25 e as 154 repetitive avalanche energy@ l=0.05mh (note 2) e ar 12 mj total power dissipation @ t c =25 115 total power dissipation @ t c =100 p d 57.5 w operating junction and storage temperature range tj, tstg -55~+175 c note : 1. pulse width limited by maximum junction temperature. 2. duty cycle 1%. thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 1.3 thermal resistance, junction-to-ambient, max r th,j-a 50 (note) thermal resistance, junction-to-ambient, max r th,j-a 110 c/w note : when mounted on the minimu m pad size recommended (pcb mount). characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v gs =0v, i d =250 a v gs(th) 1.5 - 2.5 v v ds = v gs , i d =250 a i gss - - 100 na v gs = 20, v ds =0v - - 1 v ds =80v, v gs =0v i dss - - 25 a v ds =80v, v gs =0v, tj=125 c - 31 40 v gs =10v, i d =10a *r ds(on) - 39 55 m v gs =4.5v, i d =10a *g fs - 24 - s v ds =5v, i d =10a dynamic *qg - 22.4 - *qgs - 3 - *qgd - 9.1 - nc v ds =80v, i d =25a, v gs =10v *t d(on) - 10 - *tr - 18.2 - *t d(off) - 43.6 - *t f - 21.2 - ns v ds =50v, i d =1a, v gs =10v, r gs =6
cystech electronics corp. spec. no. : c887j3 issued date : 2015.04.23 revised date : page no. : 3/ 9 MTD30N10J3 cystek product specification ciss - 866 - coss - 129 - crss - 62 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *i s - - 33 *i sm - - 90 a *v sd - 0.7 1 v i s =1a, v gs =0v *trr - 34 - ns *qrr - 53 - nc i f =25a, v gs =0, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c887j3 issued date : 2015.04.23 revised date : page no. : 4/ 9 MTD30N10J3 cystek product specification typical characteristics typical output characteristics 0 10 20 30 40 50 60 70 80 90 0246810 v ds , drain-source voltage(v) i d , drain current(a) 20v 15 v 10v 9v 8v 7v 6v v gs =4v 4.5v 5v 5.5 v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =10a r ds( on) @ tj=25c : 31 m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =10a
cystech electronics corp. spec. no. : c887j3 issued date : 2015.04.23 revised date : page no. : 5/ 9 MTD30N10J3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) pulsed ta=25c v ds =5v v ds =10v gate charge characteristics 0 2 4 6 8 10 0 4 8 12162024 total gate charge---qg(nc) v gs , gate-source voltage(v) i d =25a v ds =20v v ds =50v v ds =80v maximum safe operating area 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s 1s r ds( on) limited t c =25c, tj(max)=175c, v gs =10v, r jc =1.3c/w single pulse maximum drain current vs case temperature 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175 200 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =1.3c/w
cystech electronics corp. spec. no. : c887j3 issued date : 2015.04.23 revised date : page no. : 6/ 9 MTD30N10J3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 10 20 30 40 50 60 70 80 90 0246810 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse maximum power dissipation 0 500 1000 1500 2000 2500 3000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) peak transient power (w) t j(max) =150c t c =25c jc =1.3c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =1.3 c/w
cystech electronics corp. spec. no. : c887j3 issued date : 2015.04.23 revised date : page no. : 7/ 9 MTD30N10J3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c887j3 issued date : 2015.04.23 revised date : page no. : 8/ 9 MTD30N10J3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 150 c 200 c 60-120 seconds 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) ? time (t l ) 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c887j3 issued date : 2015.04.23 revised date : page no. : 9/ 9 MTD30N10J3 cystek product specification to-252 dimension marking: device n am e date code d30 n10 1 2 3 4 style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-252 plastic surface mount package cystek package code: j3 inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.026 ref 0.650 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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